SiC is becoming an increasingly important material, particularly in the arena of high performance GaN RF devices using SiC as a substrate. A smooth via etch through the SiC is essential to enable these devices, and Oxford Instruments has just announced the ideal solution for etching high quality SiC vias efficiently, its high performance PlasmaPro 100 Polaris etch system.
Combined with a low damage GaN etch within the same hardware, the PlasmaPro100 Polaris offers a unique capability for GaN based RF device plasma etch processing requirements.
In a webinar at 15:00 BST on 19th October, Dr Mark Dineen, Product Manager (Optoelectronics and Discrete Devices) at Oxford Instruments Plasma Technology, will describe this latest technology that offers several process capabilities suited to the SiC via application.
Dr Dineen states, “Our Applications specialists have spent significant time developing this SiC via etch process on the PlasmaPro100 Polaris etch system, enabling high selectivity and throughput amongst other benefits. These will enable our customers to etch both SiC and GaN in the same tool through advanced plasma source technology, as will be described in this webinar.”